? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 150 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 150 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c75a i dm t c = 25 c, pulse width limited by t jm 300 a i ar t c = 25 c75a e ar t c = 25 c60mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 330 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 ad 6 g to-268 4 g to-247 ad (ixth) g = gate d = drain s = source tab = drain (tab) ds98948c(05/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 150 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 23 m ? pulse test, t 300 s, duty cycle d 2 % to-268 (ixtt) (tab) g s high current power mosfet ixth 75n15 v dss = 150 v ixtt 75n15 i d25 = 75 a r ds(on) = 23 m ? ? ? ? ? n-channel enhancement mode features z international standard packages z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,381,025 6,162,665 6,306,728 b1 6,534,343 6,683,344 one or moreof the following u.s. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,486,715 6,259,123 b1 6,404,065 b1 6,583,505 6,710,405b2 ixth 75n15 ixtt 75n15 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 34 45 s c iss 5400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1100 pf c rss 420 pf t d(on) 24 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 33 ns t d(off) r g = 2 ? (external) 70 ns t f 17 ns q g(on) 210 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 45 nc q gd 90 nc r thjc 0.35 k/w r thck (to-247) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 75 a i sm repetitive 300 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-268 outline terminals: 1 - gate 2 - drain 3 - source tab - drain min recommended footprint t rr i f = 25a -di/dt = 100 a/ s v r = 100v q rm 150 2.0 ns c
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 100 120 140 160 180 200 012345678910 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 00.511.522.533.54 v d s - volts i d - amperes v gs = 10v 9v 8v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on) norm alized to i d25 v alue vs. junction temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 75a i d = 37.5a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 0 20 40 60 80 100 120 140 160 180 200 i d - amperes r d s (on) - normalize d t j = 125oc t j = 25oc v gs = 10v ixth 75n15 ixtt 75n15
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,381,025 6,162,665 6,306,728 b1 6,534,343 6,683,344 one or moreof the following u.s. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,486,715 6,259,123 b1 6,404,065 b1 6,583,505 6,710,405b2 fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - p f c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v g s - volts v ds = 75v i d = 37.5a i g = 10ma fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 30 60 90 120 150 180 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to- drain voltage 0 20 40 60 80 100 120 140 160 180 200 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. for w ar d-bias safe operating area 1 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150 o c t c = 25 o c r ds(on) limit 10ms 25s ixth 75n15 ixtt 75n15
? 2004 ixys all rights reserved fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) ixth 75n15 ixtt 75n15
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